JPH0436576B2 - - Google Patents
Info
- Publication number
- JPH0436576B2 JPH0436576B2 JP59231607A JP23160784A JPH0436576B2 JP H0436576 B2 JPH0436576 B2 JP H0436576B2 JP 59231607 A JP59231607 A JP 59231607A JP 23160784 A JP23160784 A JP 23160784A JP H0436576 B2 JPH0436576 B2 JP H0436576B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- layer
- base
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 229910021332 silicide Inorganic materials 0.000 claims description 22
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 13
- 238000000605 extraction Methods 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 4
- 238000000137 annealing Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 239000005360 phosphosilicate glass Substances 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910021339 platinum silicide Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
- H10D84/617—Combinations of vertical BJTs and only diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59231607A JPS61108162A (ja) | 1984-10-31 | 1984-10-31 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59231607A JPS61108162A (ja) | 1984-10-31 | 1984-10-31 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61108162A JPS61108162A (ja) | 1986-05-26 |
| JPH0436576B2 true JPH0436576B2 (en]) | 1992-06-16 |
Family
ID=16926160
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59231607A Granted JPS61108162A (ja) | 1984-10-31 | 1984-10-31 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61108162A (en]) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6393151A (ja) * | 1986-10-07 | 1988-04-23 | Toshiba Corp | 半導体装置 |
-
1984
- 1984-10-31 JP JP59231607A patent/JPS61108162A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61108162A (ja) | 1986-05-26 |
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